100+ Free UGC NET Electronic Science Practice Questions

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Key Facts: UGC NET Electronic Science Exam

100 MCQs

Paper 2 (Electronic Science) consists of 100 objective questions

UGC NET Exam Scheme

3 hours

Total duration for both papers combined with no break

NTA Exam Guidelines

No negative marks

No marks are deducted for incorrect answers in the exam

NTA Marking Scheme

Code 88

The official subject code for Electronic Science in UGC NET

UGC NET Information Bulletin

55% / 50%

Minimum Master's degree marks required to apply

UGC NET Eligibility Criteria

Top 6%

Only the top 6% of appearing candidates qualify for Assistant Professor

UGC NET Selection Criteria

UGC NET Electronic Science (Paper 2) is a CBT exam consisting of 100 MCQs (200 marks) held in a unified 3-hour session. General candidates pay ₹1,150, OBC-EWS pay ₹600, and SC/ST/PwD pay ₹325. This test bank offers 100 questions covering all 10 core units.

Sample UGC NET Electronic Science Practice Questions

Try these sample questions to test your UGC NET Electronic Science exam readiness. Each question includes a detailed explanation. Start the interactive quiz above for the full 100+ question experience with AI tutoring.

1Under thermal equilibrium, the product of electron and hole concentrations in a semiconductor is equal to the square of its intrinsic carrier concentration (ni^2). If a silicon sample at 300 K has an intrinsic carrier concentration of 1.5 x 10^10 cm^-3 and is doped with donor atoms to a concentration of 1 x 10^16 cm^-3, what is the hole concentration in the sample?

A.2.25 x 10^4 cm^-3

B.1.5 x 10^4 cm^-3

C.2.25 x 10^6 cm^-3

D.1.5 x 10^6 cm^-3

Explanation: According to the mass action law, the product of electron and hole concentrations is constant at a given temperature and equals the square of the intrinsic concentration (n * p = ni^2). In an n-type semiconductor doped with donor concentration ND = 1 x 10^16 cm^-3, the majority carrier concentration n is approximately ND. Thus, the minority carrier hole concentration is p = ni^2 / ND = (1.5 x 10^10)^2 / 10^16 = 2.25 x 10^20 / 10^16 = 2.25 x 10^4 cm^-3.

2Which of the following semiconductor diodes works on the principle of quantum mechanical tunneling under reverse bias conditions?

A.Zener Diode

B.Tunnel Diode

C.Schottky Diode

D.Varactor Diode

Explanation: A tunnel diode (Esaki diode) is a highly doped pn-junction that exhibits negative resistance due to quantum mechanical tunneling of electrons across the narrow depletion region. This tunneling occurs at very low forward bias and reverse bias.

3In a bipolar junction transistor (BJT), if the common-base current gain (alpha) is 0.98, what is the common-emitter current gain (beta)?

A.50

B.98

C.49

D.100

Explanation: The relationship between the common-base current gain alpha and the common-emitter current gain beta is given by beta = alpha / (1 - alpha). Substituting alpha = 0.98 gives beta = 0.98 / (1 - 0.98) = 0.98 / 0.02 = 49.

4For an n-channel enhancement-type MOSFET, the threshold voltage Vth is 1 V. If the gate-to-source voltage VGS is 3 V and the drain-to-source voltage VDS is 1.5 V, in which region of operation is the MOSFET?

A.Cut-off region

B.Saturation region

C.Subthreshold region

D.Triode (Linear) region

Explanation: First, verify if the channel is formed: VGS > Vth (3 V > 1 V), so the transistor is ON. Next, compare VDS with the overdrive voltage (VGS - Vth) = 3 - 1 = 2 V. Since VDS < VGS - Vth (1.5 V < 2 V), the MOSFET operates in the triode or linear region.

5A High Electron Mobility Transistor (HEMT) utilizes a heterojunction to achieve high switching speeds. Which phenomenon is primarily responsible for the extremely high mobility in a HEMT?

A.Formation of a Two-Dimensional Electron Gas (2DEG) at the undoped heterointerface

B.Doping of the channel with heavy donor concentrations

C.Reduced effective mass due to high temperatures

D.Direct bandgap transition in silicon substrate

Explanation: In a HEMT, a heterojunction (such as AlGaAs/GaAs) creates a potential well that accumulates electrons, forming a Two-Dimensional Electron Gas (2DEG). Since this channel region is undoped, the electrons do not undergo ionized impurity scattering, resulting in very high carrier mobility.

6A silicon solar cell has a short-circuit current density (Jsc) of 30 mA/cm^2 and an open-circuit voltage (Voc) of 0.6 V. If the fill factor (FF) of the solar cell is 0.8, what is the maximum power output per unit area of the solar cell under standard test conditions?

A.18.0 mW/cm^2

B.14.4 mW/cm^2

C.24.0 mW/cm^2

D.30.0 mW/cm^2

Explanation: The maximum power output per unit area is calculated as Pmax = Jsc * Voc * FF. Substituting the values: Pmax = 30 mA/cm^2 * 0.6 V * 0.8 = 18 * 0.8 = 14.4 mW/cm^2.

7Which of the following statements correctly distinguishes between Zener breakdown and Avalanche breakdown in PN junction diodes?

A.Zener breakdown occurs at higher reverse voltages compared to avalanche breakdown

B.Zener breakdown has a positive temperature coefficient, while avalanche breakdown has a negative temperature coefficient

C.Zener breakdown occurs in heavily doped junctions due to field emission, whereas avalanche breakdown occurs in lightly doped junctions due to impact ionization

D.Zener breakdown involves carrier multiplication by collisions, while avalanche breakdown involves direct tunneling

Explanation: Zener breakdown occurs in highly doped junctions under high electric fields (>10^6 V/cm), where electrons tunnel directly from the valence band to the conduction band (field emission). Avalanche breakdown occurs in lightly doped junctions where high reverse bias accelerates carriers to high kinetic energies, causing impact ionization and carrier multiplication.

8An LED fabricated from GaAsP has a bandgap energy (Eg) of 1.9 eV. What is the approximate wavelength of the light emitted by this LED?

A.827 nm

B.530 nm

C.413 nm

D.653 nm

Explanation: The wavelength lambda of the emitted photon is related to the bandgap energy Eg by lambda = hc / Eg. In practical units, lambda (nm) approx 1240 / Eg (eV). Substituting Eg = 1.9 eV: lambda = 1240 / 1.9 approx 652.6 nm, which rounds to 653 nm (red light).

9A metal with work function 4.8 eV is deposited on an n-type silicon semiconductor with electron affinity 4.05 eV and donor doping concentration ND = 10^16 cm^-3. Under thermal equilibrium at 300 K, what is the ideal Schottky barrier height (Phi_Bn)?

A.0.75 eV

B.8.85 eV

C.0.45 eV

D.1.25 eV

Explanation: For a metal on an n-type semiconductor, the ideal Schottky barrier height Phi_Bn is given by the Schottky-Mott limit: Phi_Bn = Phi_m - Chi_s. Substituting the values: Phi_Bn = 4.8 eV - 4.05 eV = 0.75 eV.

10A semiconductor sample is illuminated with light, creating excess electron-hole pairs. If the excess carrier lifetime is 10 microseconds and the diffusion coefficient for holes is Dp = 12 cm^2/s, what is the diffusion length (Lp) of holes in this sample?

A.3.46 x 10^-3 cm

B.1.10 x 10^-2 cm

C.1.20 x 10^-4 cm

D.1.20 x 10^-3 cm

Explanation: The diffusion length Lp is related to the diffusion coefficient Dp and carrier lifetime tau_p by Lp = sqrt(Dp * tau_p). Substituting the given values: Lp = sqrt(12 cm^2/s * 10 * 10^-6 s) = sqrt(1.2 * 10^-4 cm^2) approx 1.095 x 10^-2 cm, which is 1.10 x 10^-2 cm.

About the UGC NET Electronic Science Exam

The National Eligibility Test (NET) is conducted by the National Testing Agency (NTA) on behalf of the University Grants Commission (UGC) to determine the eligibility of Indian nationals for 'Assistant Professor' and 'Junior Research Fellowship (JRF)' in Indian universities and colleges. Paper 2 (Electronic Science, Subject Code 88) tests candidates on advanced post-graduate topics across electronics engineering, semiconductor physics, communication systems, power electronics, and control systems. This practice test bank contains exactly 100 high-quality MCQs covering all 10 core units of the syllabus, designed to help candidates build analytical speed and conceptual clarity.

Assessment

The UGC NET exam consists of two papers, held in a single 3-hour (180 minutes) session without any break. Paper 1 contains 50 compulsory general teaching and research aptitude questions (100 marks). Paper 2 contains 100 compulsory subject-specific questions (200 marks). This practice test bank contains exactly 100 high-quality questions specifically designed for Paper 2 (Electronic Science, Code 88). Each question carries 2 marks, and there is no negative marking.

Time Limit

3 hours (180 minutes) total for both Paper 1 and Paper 2, with no break between papers.

Passing Score

Minimum qualifying marks: 40% aggregate in both papers for General/EWS, and 35% aggregate for OBC-NCL/SC/ST/PwD/Third Gender. The actual selection cut-offs for Assistant Professor and JRF are determined per session based on merit (top 6% of active test-takers).

Exam Fee

General/Unreserved: ₹1,150. General-EWS/OBC-NCL: ₹600. SC/ST/PwD/Third Gender: ₹325. (National Testing Agency (NTA))

UGC NET Electronic Science Exam Content Outline

10%

Semiconductor Devices

Energy bands, carrier transport, PN junctions, diodes (Zener, tunnel, Schottky), BJTs, JFETs, MOSFETs, HEMTs, and optoelectronic devices (LED, photodiode, solar cell).

10%

IC Fabrication

Silicon crystal growth, epitaxial growth, thermal oxidation, photolithography, wet/dry etching, diffusion, ion implantation, metallization (Al, Cu alloying), and cleanroom standards.

10%

Network Analysis

Network equations (KCL, KVL), loop/node analysis, theorems (Superposition, Thevenin, Norton, Max Power Transfer), two-port networks (Z, Y, ABCD, h), transient analysis, and resonance.

10%

Signals and Systems

Continuous and discrete-time signals, LTI systems properties, Fourier series/transforms, Laplace and z-transforms, ROC stability, convolution, and sampling theorem.

10%

Digital Electronics

Boolean logic, Karnaugh maps, combinational circuits (mux, decoders, adders), sequential circuits (flip-flops, counters, registers), logic families (TTL, CMOS, ECL), and A/D and D/A converters.

10%

Microprocessors and Microcontrollers

8085 and 8086 microprocessor architectures, assembly programming, peripheral interfacing (8255, 8259), and 8051 microcontroller memory, ports, timers, and serial communication.

10%

Electromagnetic Theory

Maxwell's equations, plane wave propagation, intrinsic impedance, Poynting vector, boundary conditions, transmission lines, input impedance, waveguides, and antennas.

10%

Communication Systems

Analog communication (AM, FM, PM), superheterodyne receivers, noise analysis, digital communication (PCM, DPCM, DM, ASK, FSK, PSK, QAM), information theory, error control coding, and optical fibers.

10%

Power Electronics

Power semiconductor devices (SCR, MOSFET, IGBT, GTO), phase-controlled rectifiers, DC-DC converters (buck, boost, buck-boost), inverters, gate triggering, and snubber protection circuits.

10%

Control Systems and Transducers

Block diagram reduction, time-domain response, stability criteria (Routh-Hurwitz, Nyquist, Bode plot), state-space modeling, active/passive transducers (strain gauge, LVDT, RTD, piezoelectric).

How to Pass the UGC NET Electronic Science Exam

What You Need to Know

Passing score: Minimum qualifying marks: 40% aggregate in both papers for General/EWS, and 35% aggregate for OBC-NCL/SC/ST/PwD/Third Gender. The actual selection cut-offs for Assistant Professor and JRF are determined per session based on merit (top 6% of active test-takers).
Assessment: The UGC NET exam consists of two papers, held in a single 3-hour (180 minutes) session without any break. Paper 1 contains 50 compulsory general teaching and research aptitude questions (100 marks). Paper 2 contains 100 compulsory subject-specific questions (200 marks). This practice test bank contains exactly 100 high-quality questions specifically designed for Paper 2 (Electronic Science, Code 88). Each question carries 2 marks, and there is no negative marking.
Time limit: 3 hours (180 minutes) total for both Paper 1 and Paper 2, with no break between papers.
Exam fee: General/Unreserved: ₹1,150. General-EWS/OBC-NCL: ₹600. SC/ST/PwD/Third Gender: ₹325.

Keys to Passing

Complete 500+ practice questions
Score 80%+ consistently before scheduling
Focus on highest-weighted sections
Use our AI tutor for tough concepts

UGC NET Electronic Science Study Tips from Top Performers

1Master the fundamentals of semiconductor devices, including energy bands, carrier concentration calculations, and characteristics of devices like BJTs, MOSFETs, and HEMTs.

2Practice network theorems (Thevenin, Norton, Maximum Power Transfer) and two-port parameter conversions regularly. These are high-scoring areas that involve direct numerical calculations.

3Revise microprocessor assembly coding (8085 and 8086) and microcontroller architecture (8051). Pay special attention to timing diagrams, register configurations, and serial communications.

4Understand the mathematical transformations in Signals and Systems, including Laplace, Fourier, and z-transforms. Focus on Region of Convergence (ROC) properties and their relation to causality and stability.

5Focus on Electromagnetic Theory and Communication Systems. Solve problems on transmission lines, wave propagation in dielectrics, waveguide cutoff frequencies, Shannon capacity, and modulation index calculations.

Frequently Asked Questions

What is the exam pattern of UGC NET Electronic Science?

The exam consists of two papers held in a single 3-hour session without a break. Paper 1 has 50 teaching/research aptitude questions (100 marks), and Paper 2 has 100 Electronic Science (Code 88) questions (200 marks). All questions are multiple-choice and compulsory.

Is there any negative marking in UGC NET?

No, there is no negative marking for incorrect answers in either Paper 1 or Paper 2 of the UGC NET exam.

What is the application fee for UGC NET 2026?

The fee is ₹1,150 for General/Unreserved, ₹600 for General-EWS and OBC-NCL, and ₹325 for SC, ST, PwD, and Third Gender candidates.

What is the educational eligibility for UGC NET Electronic Science?

Candidates must have completed or be in the final year of a Master's degree in Electronic Science, Electronics, Physics (with Electronics), Electrical Engineering, or related fields with at least 55% marks (50% for SC, ST, OBC-NCL, PwD, and Third Gender candidates).

Is there an age limit for UGC NET JRF and Assistant Professor?

For the Junior Research Fellowship (JRF), the upper age limit is 30 years as of the first day of the exam month (with up to 5 years relaxation for SC/ST/OBC/Women/Third Gender). There is no upper age limit to apply for the post of Assistant Professor.

How are the final cut-offs determined for UGC NET?

While the minimum qualifying marks are 40% aggregate (35% for reserved categories) across both papers, the actual qualifying cut-off for Assistant Professor and JRF is determined per subject and category, representing the top 6% of the appearing candidates who meet the eligibility.