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100+ Free Kerala Plus Two Electronics (DHSE) Practice Questions

Kerala Higher Secondary Plus Two (Class 12) Electronics — Directorate of Higher Secondary Education (DHSE), Government of Kerala practice questions are available now; exam metadata is being verified.

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2026 Statistics

Key Facts: Kerala Plus Two Electronics (DHSE) Exam

CE + PE + TE

Official assessment combines continuous, practical, and terminal evaluation

DHSE Higher Secondary examination scheme

~2 h

Typical theory duration for practical-bearing subjects (plus cool-off as notified)

DHSE Plus Two exam pattern reporting

D+ / ~30%

Common pass threshold (aggregate) with separate TE minimum

DHSE grading / pass criteria reporting

Lab subject

Electronics includes Practical Evaluation under DHSE schemes

DHSE practical subject lists

Mixed + practical

Official format is mixed written theory plus practical, not pure MCQ

DHSE Plus Two Electronics assessment pattern

English MCQ adaptation

This free local bank is not the official mixed paper or practical substitute

OpenExamPrep practice policy

DHSE Kerala Plus Two Electronics is a Class 12 lab subject with CE + PE + TE (mixed theory, not pure MCQ). Pass is commonly D+/~30% aggregate with ~30% TE minimum. Fees are paid through schools. This free 2026 bank is an English MCQ study adaptation — not an official paper or practical substitute.

Sample Kerala Plus Two Electronics (DHSE) Practice Questions

Try these sample questions to test your Kerala Plus Two Electronics (DHSE) exam readiness. Each question includes a detailed explanation. Start the interactive quiz above for the full 100+ question experience with AI tutoring.

1In terms of electrical resistivity at room temperature, semiconductors typically lie:
A.Between metals (low resistivity) and insulators (very high resistivity)
B.Far below metals, with near-zero resistivity
C.Always exactly equal to perfect insulators
D.Always higher than every known insulator
Explanation: Semiconductors have intermediate resistivity—much higher than metals but far lower than good insulators—so doping and temperature can usefully control conduction.
2Silicon and germanium are Group-IV semiconductors. Each atom in the crystal contributes how many valence electrons to covalent bonding?
A.2
B.3
C.4
D.5
Explanation: Si and Ge are tetravalent (four valence electrons). In the diamond-like lattice, each atom forms four covalent bonds with neighbours.
3An n-type semiconductor is formed by doping pure silicon with a small amount of:
A.A trivalent impurity such as boron
B.A pentavalent impurity such as phosphorus or arsenic
C.A pure insulator such as silica glass only
D.A divalent metal such as copper only as the sole lattice atom
Explanation: Pentavalent donors (P, As, Sb) contribute extra electrons as majority carriers, producing n-type material.
4In a p-type semiconductor at room temperature, the majority charge carriers are:
A.Electrons
B.Holes
C.Only immobile ions
D.Neutrons
Explanation: Acceptor doping creates a large hole population; holes are majority carriers and electrons are minority carriers in p-type material.
5As temperature of an intrinsic semiconductor increases, its conductivity generally:
A.Decreases because more covalent bonds form
B.Increases because more electron–hole pairs are thermally generated
C.Becomes exactly zero above 0 °C
D.Is independent of temperature for all semiconductors
Explanation: Higher temperature breaks more covalent bonds, generating more free electrons and holes, so intrinsic conductivity rises.
6In the energy-band picture, the energy gap of a semiconductor is:
A.Much larger than that of a typical insulator and smaller than a metal
B.Essentially zero like a metal with completely filled bands only
C.Finite and moderate (on the order of about 1 eV for common materials such as Si), between metals and insulators
D.Infinite so that no electron can ever reach the conduction band
Explanation: Semiconductors have a moderate forbidden gap (Si about 1.1 eV order of magnitude), so thermal energy and doping can populate the conduction band—unlike metals or wide-gap insulators.
7The process of adding controlled impurities to a pure semiconductor to modify its electrical properties is called:
A.Annealing only
B.Doping
C.Sintering only
D.Ion implantation without any impurity concept
Explanation: Doping is the intentional introduction of donor or acceptor impurities to create n-type or p-type extrinsic semiconductors.
8In an intrinsic semiconductor under thermal equilibrium, the electron concentration n and hole concentration p satisfy:
A.n much greater than p always
B.p much greater than n always
C.n = p = ni (intrinsic concentration)
D.n + p = 0 always
Explanation: In pure (intrinsic) material, thermal generation creates electrons and holes in equal numbers, so n = p = ni.
9Compared with germanium, silicon is preferred for most modern power and IC devices mainly because silicon:
A.Has a much smaller energy gap that always makes leakage zero
B.Has a larger energy gap, better high-temperature behaviour, and a stable native oxide useful in fabrication
C.Cannot form a p–n junction
D.Is a metal rather than a semiconductor
Explanation: Si’s larger gap than Ge reduces intrinsic leakage at higher temperatures, and SiO2 technology enabled planar IC fabrication.
10The mass-action law for a semiconductor at thermal equilibrium states that the product of electron and hole concentrations is:
A.n · p = ni² (for a given temperature)
B.n + p = ni
C.n / p = ni²
D.n · p = 0 always
Explanation: At thermal equilibrium, n·p = ni². In extrinsic material one carrier type rises and the other falls so the product remains ni².

About the Kerala Plus Two Electronics (DHSE) Practice Questions

Verified exam format metadata for Kerala Higher Secondary Plus Two (Class 12) Electronics — Directorate of Higher Secondary Education (DHSE), Government of Kerala is pending. The practice questions above remain available while official exam length, timing, passing score, fee, and administrator details are reviewed.