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100+ Free CHSE Odisha Elective Electronics Practice Questions

Council of Higher Secondary Education, Odisha (CHSE Odisha) Higher Secondary (+2) Elective Electronics (Science stream, Group B 4th elective) practice questions are available now; exam metadata is being verified.

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2026 Statistics

Key Facts: CHSE Odisha Elective Electronics Exam

200 marks

Elective Electronics total: Y1 and Y2 each Theory 70 + Practical 30

CHSE Odisha science_2016 Courses of Studies — Electronics

70 + 30

Theory and practical mark split each year

CHSE Odisha Electronics theory/practical structure

3 hours

Typical duration for each theory and practical paper

CHSE Odisha science_2016 Electronics general instructions

4th elective

Electronics is Group-B 4th elective only (Science scheme)

CHSE Odisha science_2016 scheme of studies

In AHSE fee

No separate elective marketplace fee; included in session exam fee

CHSE Odisha AHSE fee structure via colleges

CHSE Odisha Elective Electronics is a +2 Science Group-B elective (200 marks: each year Theory 70 + Practical 30, ~3-hour papers). Official assessment mixes constructed-response theory with lab practical—not a pure MCQ board paper. This free 2026 bank is an English MCQ study adaptation aligned to science_2016 units from passive components through semiconductors, amplifiers, digital electronics, and communication systems.

Sample CHSE Odisha Elective Electronics Practice Questions

Try these sample questions to test your CHSE Odisha Elective Electronics exam readiness. Each question includes a detailed explanation. Start the interactive quiz above for the full 100+ question experience with AI tutoring.

1In CHSE +2 Electronics, pure silicon at room temperature is classified as an:
A.Intrinsic semiconductor with thermally generated electron–hole pairs
B.Perfect metal with zero band gap
C.Insulator with no free carriers ever
D.Superconductor below critical temperature only
Explanation: Intrinsic semiconductors have a filled valence band and empty conduction band separated by a modest gap; thermal energy generates equal electrons and holes.
2Pentavalent impurities such as phosphorus, when added to pure silicon, produce:
A.A perfect metal with resistivity lower than copper
B.n-type extrinsic semiconductor with electrons as majority carriers
C.p-type semiconductor with holes as majority carriers
D.An insulator by filling the valence band completely
Explanation: Donor (Group-V) atoms contribute extra electrons, creating n-type material with electron majority carriers.
3Trivalent boron doping of germanium creates:
A.Intrinsic material with n = p exactly always
B.A metal-like free-electron gas only
C.p-type semiconductor with holes as majority carriers
D.n-type semiconductor with electrons as majority carriers
Explanation: Acceptors create hole majority carriers; the material is p-type extrinsic semiconductor.
4The forbidden energy gap of a typical insulator compared with a semiconductor is:
A.Exactly zero as in metals
B.Always smaller than in semiconductors
C.Negative, allowing free band overlap
D.Much larger, so very few carriers are thermally excited at room temperature
Explanation: Insulators have large Eg (several eV); semiconductors have smaller Eg (~1 eV class for Si/Ge).
5In a reverse-biased PN junction, the width of the depletion layer:
A.Increases and minority-carrier reverse current remains very small until breakdown
B.Disappears completely so current becomes huge ohmic
C.Becomes zero and the diode shorts like a wire
D.Reverses polarity of majority carriers only
Explanation: Reverse bias widens the depletion region and supports only a small reverse saturation current until breakdown.
6The potential barrier of a silicon PN junction is typically of order:
A.About 100 V for every commercial diode
B.About 0.7 V (silicon) and lower (~0.3 V) for germanium
C.Exactly 12 V like a car battery
D.Zero for all semiconductors at room temperature
Explanation: Built-in barrier is ~0.7 V for Si and ~0.3 V for Ge at room temperature (order-of-magnitude values taught at +2).
7A Zener diode is primarily designed to operate in:
A.The active region of a BJT
B.Open-circuit microwave resonance only
C.Controlled reverse breakdown as a voltage reference/regulator
D.Forward bias only as a high-current rectifier
Explanation: Zener (and avalanche) reverse breakdown is used for nearly constant reverse voltage regulation.
8An LED emits light when:
A.Strongly reverse biased into Zener breakdown only
B.Used as a pure ohmic resistor with no junction
C.Held exactly at zero bias with no current
D.Forward biased so injected carriers recombine and release photons
Explanation: Forward injection and radiative recombination produce visible/IR photons in LEDs.
9A photodiode is normally operated:
A.In reverse bias so photocurrent rises with incident light
B.Only as a series heater resistor
C.In hard saturation like a mechanical switch forever
D.Without any electrical connection
Explanation: Reverse-biased photodiodes convert incident light into reverse current proportional to intensity (idealized +2 model).
10In a half-wave rectifier with sinusoidal input Vm, the peak reverse voltage across the diode (ideal) is approximately:
A.0
B.Vm
C.2Vm
D.Vm/2
Explanation: In basic half-wave analysis the diode sees peak inverse voltage about Vm (ideal transformer secondary peak).

About the CHSE Odisha Elective Electronics Practice Questions

Verified exam format metadata for Council of Higher Secondary Education, Odisha (CHSE Odisha) Higher Secondary (+2) Elective Electronics (Science stream, Group B 4th elective) is pending. The practice questions above remain available while official exam length, timing, passing score, fee, and administrator details are reviewed.