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100+ Free Tamil Nadu HSE First Year Basic Electronics Engineering Practice Questions

Tamil Nadu Higher Secondary First Year (HSE +1 / Class 11) Basic Electronics Engineering under the Directorate of Government Examinations (DGE), Tamil Nadu practice questions are available now; exam metadata is being verified.

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2026 Statistics

Key Facts: Tamil Nadu HSE First Year Basic Electronics Engineering Exam

10:00–1:15

Official March 2026 HSE theory sitting window including reading/verification time (dge.tn.gov.in timetable)

DGE TN HSE March 2026 public examination timetable

35/100

Minimum pass mark per subject under the HSE new pattern, subject to theory/practical floor rules

DGE HSE_E.pdf scheme of examination

3 hours

Approximate theory writing duration after reading and particulars verification in the public exam schedule

DGE TN HSE March 2026 timetable

DGE TN

Administered by the Directorate of Government Examinations, Chennai, for Tamil Nadu State Board Higher Secondary

dge.tn.gov.in

SCERT syllabus

Class 11 textbooks and syllabus prescribed by SCERT / School Education Department (Samacheer Kalvi)

DGE HSE scheme — syllabus prescribed by SCERT/DSE

English MCQ bank

This practice set is an English-language MCQ study adaptation, not the official mixed written paper

OpenExamPrep practice-content policy

₹150/₹200

School exam fee band for groups without/with practical subjects plus certificate/service charges (concessions apply)

DGE HSE_E.pdf school candidate fee table

Arrear 2026

March 2026 HSE+1 public theory examinations notified for eligible 2018–2025 arrear candidates on the official DGE timetable

DGE TN official timetable PDF 04.11.2025

Free English MCQ practice for Tamil Nadu HSE +1 Basic Electronics Engineering (DGE). Official paper is mixed written theory on the Samacheer Kalvi Class 11 vocational syllabus — this bank is a study adaptation, not a format simulation. March 2026 HSE+1 public exam timetable is for 2018–2025 arrear candidates only.

Sample Tamil Nadu HSE First Year Basic Electronics Engineering Practice Questions

Try these sample questions to test your Tamil Nadu HSE First Year Basic Electronics Engineering exam readiness. Each question includes a detailed explanation. Start the interactive quiz above for the full 100+ question experience with AI tutoring.

1In intrinsic (pure) silicon at room temperature, free charge carriers arise mainly because:
A.All valence electrons are free at 0 K
B.Only holes exist without electrons
C.Thermal energy frees electron–hole pairs across the band gap
D.The crystal is permanently metallic
Explanation: In pure semiconductors, thermal generation creates equal numbers of electrons and holes that enable modest conductivity.
2Doping silicon with a Group V donor impurity (for example phosphorus) primarily creates:
A.A superconductor at room temperature
B.n-type material with majority electrons
C.p-type material with majority holes
D.A perfect insulator
Explanation: Donor (pentavalent) atoms contribute extra electrons, so majority carriers in n-type Si are electrons.
3Doping silicon with a Group III acceptor impurity (for example boron) primarily creates:
A.p-type material with majority holes
B.n-type material with majority electrons
C.An intrinsic semiconductor with zero carriers
D.A permanent short circuit
Explanation: Acceptor (trivalent) atoms create hole majority carriers, defining p-type silicon.
4In n-type silicon the minority carriers are primarily:
A.Electrons
B.Ions only
C.Photons
D.Holes
Explanation: In n-type material electrons are majority carriers and holes are minority carriers.
5A p–n junction diode is formed by:
A.Winding copper wire around iron
B.Placing two capacitors in series
C.Joining p-type and n-type semiconductor regions in intimate contact
D.Connecting two pure metals only
Explanation: A diode’s rectifying junction is the metallurgical boundary between p-type and n-type regions.
6In a silicon p–n diode under forward bias, the applied voltage:
A.Removes all charge carriers permanently
B.Reduces the potential barrier and allows significant forward current once above ~0.7 V typically
C.Always increases the barrier height
D.Forces reverse current only
Explanation: Forward bias lowers the barrier so majority carriers inject across the junction; Si typically conducts strongly near ~0.6–0.7 V.
7Under reverse bias a silicon diode ideally conducts:
A.Only a very small reverse saturation (leakage) current until breakdown
B.The same large current as in strong forward bias
C.Infinite current immediately at any reverse voltage
D.No current at any reverse voltage including breakdown
Explanation: Reverse bias widens the depletion region; only tiny reverse current flows until avalanche/Zener breakdown.
8The depletion region of a p–n junction contains mainly:
A.Only free electrons densely packed
B.Only free holes densely packed
C.Liquid electrolyte
D.Immobile ionized donor and acceptor charges with few free carriers
Explanation: Uncovered fixed ions create the space-charge (depletion) layer; free carriers are depleted there.
9A silicon diode is connected in series with a 100 Ω resistor and a 5 V DC source, anode toward the positive terminal (forward). Approximate current if V_F ≈ 0.7 V is:
A.5 mA
B.70 mA
C.43 mA
D.50 mA
Explanation: I ≈ (V_S − V_F)/R = (5 − 0.7)/100 = 4.3/100 = 0.043 A = 43 mA.
10An LED (light-emitting diode) emits light primarily when:
A.It is used only as a variable resistor
B.It is forward biased and recombination of carriers releases photons
C.It is reverse biased below breakdown
D.No current flows through it
Explanation: Forward current injects carriers; radiative recombination in the junction produces light.

About the Tamil Nadu HSE First Year Basic Electronics Engineering Practice Questions

Verified exam format metadata for Tamil Nadu Higher Secondary First Year (HSE +1 / Class 11) Basic Electronics Engineering under the Directorate of Government Examinations (DGE), Tamil Nadu is pending. The practice questions above remain available while official exam length, timing, passing score, fee, and administrator details are reviewed.